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1 tga4510-sm april 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com key features ? typical frequency range: 29-31 ghz ? 17 dbm nominal psat ? 15 db nominal gain ? bias conditions: vd = 6v, id = 60 ma ? compact 4 x 4 qfn with 20 leads ? package dimensions: 4.0 x 4.0 x 0.9 mm primary applications ? ka-band vsat ground terminal ? point-to-point radio ? base stations measured performance bias conditions: vd = 6v, idq = 60ma product description the triquint tga4510-sm is a ka-band packaged driver amplifier. the tga4510-sm operates from 29-31 ghz and is designed using triquint?s power phemt production process. the tga4510-sm typically provides 17 dbm of saturated output power with small signal gain of 15 db. the tga4510-sm is available in a low- cost, surface mount 4x4 qfn style package and is ideally suited for ka- band vsat ground terminal, point-to- point radio and base station applications. evaluation boards are available upon request. lead-free and rohs compliant. ka band compact driver amplifier datasheet subject to change without notice
2 tga4510-sm april 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table i maximum ratings symbol parameter 1 / value notes v + positive supply voltage 8 v 2 / v - negative supply voltage range -5v to 0v i + positive supply current (quiescent) 81 ma 2 / | i g | gate supply current 3.5 ma p in input continuous wave power 18 dbm 2 / p d power dissipation 0.65 w 2 / 3 / t ch operating channel temperature 200 c 4 / 5 / mounting temperature (30 seconds) 260 c t stg storage temperature -65 to 150 c 1 / these ratings represent the maximum operable values for this device. 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3 / when operated at this power dissipation with a base plate temperature of 85 c, the median life is 4.1e+5 hours. 4 / these ratings apply to each individual fet. 5 / junction operating temperature will directly affect the device median time to failure (tm). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
3 tga4510-sm april 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com table ii rf characterization table (t a = 25 c, nominal) bias conditions: vd = 6v, idq = 60ma symbol parameter test condition nominal units gain small signal gain f = 29-31 ghz 15 db irl input return loss f = 29-31 ghz 10 db orl output return loss f = 29-31 ghz 12 db psat saturated output power f = 29-31 ghz 17 dbm p1db output power @ 1db compression f = 29-31 ghz 16 dbm
4 tga4510-sm april 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com median lifetime (tm) vs. channel temperature table iii thermal information parameter test condition t ch ( c) jc ( c/w) tm (hrs) jc thermal resistance (channel to package) v d = 6v i dq = 60ma p diss = 0.36 w 127 117.5 7.9 e+6 note: worst case condition with no rf applied, 100% of dc power is dissipated. package temperature @ 85 c
5 tga4510-sm april 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured performance bias conditions: vd = 6 v, idq =60 ma
6 tga4510-sm april 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com measured performance bias conditions: vd = 6 v, idq =60 ma
7 tga4510-sm april 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com * note: temperature data is taken using connectorized evaluation boards. the reference plane is at rf connectors, and hence connector and board loss has not been de-embedded. measured performance* bias conditions: vd = 6 v, idq =60 ma data taken @ 30 ghz
8 tga4510-sm april 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com package pinout diagram pin description 1, 5, 6, 10, 11, 15, 16, 20, 21 gnd 2, 4, 7, 8, 12, 14, 18, 19 nc 3r f i n p u t 9v d 13 rf output 17 vg bottom view top view dot indicates pin 1 gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. tga 4510 date code lot code
9 tga4510-sm april 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. mechanical drawing units: millimeters
10 tga4510-sm april 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. * the layout is a general purpose drawing that needs to be tuned for the specific application. pcb is ro4003 8 mil thickness, 0.5 oz standard copper cladding, with er = 3.38. recommended board layout assembly * 20.0 55.0 49.5 15.0 15.0 20.0 35.0 vg ~ -0.6v adjust to obtain id = 60ma 3500 pf 10 ohm vd = 6v 10 ohm 3500 pf tuning tuning tuning 100 pf 100 pf units: mils
11 tga4510-sm april 2012 ? rev c triquint semiconductor: www. tri quint.com (972)994- 8465 fax (972)994-8504 info-mmw@tqs.com ordering information part package style tga4510-sm qfn 4x4 surface mount recommended surface mount package assembly proper esd precautions must be followed while handling packages. triquint recommends using a conductive solder paste for attachment. follow solder paste and reflow oven vendors? recommendations when developing a solder reflow profile. typical solder reflow profiles are listed in the table below. hand soldering is not recommended. solder paste c an be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well controlled to ensure consistent mechanical and electrical performance. solder attach process requires the use of no clean flux. gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. typical solder reflow profiles reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 ? 120 sec @ 140 ? 160 c 60 ? 180 sec @ 150 ? 200 c time above melting point 60 ? 150 sec 60 ? 150 sec max peak temperature 240 c 260 c time within 5 c of peak temperature 10 ? 20 sec 10 ? 20 sec ramp-down rate 4 ? 6 c/sec 4 ? 6 c/sec

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